Abstract
AbstractThe moiré superlattices of transition metal dichalcogenide heterobilayers have a pronounced effect on the optical properties of interlayer excitons (IXs) and have been intensively studied in recent years. However, the impact of moiré potentials on the temporal coherence of the IXs has not yet been investigated in detail. Here, we systematically investigate the coherence properties of both the ensemble of delocalized and the ensemble of localized IXs trapped in moiré potentials of the hexagonal boron nitride encapsulated WSe2-MoSe2 heterostructures. Our low-temperature first-order correlation measurements show that prolonged T2 dephasing times with values up to 730 fs can be obtained from the ensemble of localized IXs under moderate pump powers. We observed up to almost a five-fold increase over the values we obtained from the delocalized IXs, while more than two-fold over the previously reported values of T2 ~ 300 fs from the delocalized IXs. The prolonged values of T2 dephasing times and narrow photoluminescence (PL) linewidths for the ensemble of moiré-trapped IXs compared to delocalized one indicate that dephasing mechanisms caused by exciton-low energy acoustic phonon and exciton-exciton scattering are significantly suppressed due to the presence of localization potentials. Our pump power-dependent T2 results show that ultra-long dephasing times can be expected if the dephasing time measurements are performed with the narrow photoluminescence emission line of a single moiré-trapped IX at a low pump power regime. The prolonged values of IX dephasing times would be critical for the applications of quantum information science and the development of two-dimensional material-based nanolasers.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Reference53 articles.
1. Yang, E.-H., Datta, D., Ding, J. & Hader, G. Synthesis, Modelling and Characterization of 2D Materials and their Heterostructures, 1st edn, (Elsevier, 2020).
2. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
3. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010).
4. He, K. et al. Tightly bound excitons in monolayer WSe2. Phys. Rev. Lett. 113, 026803 (2014).
5. Chernikov, A. et al. Exciton binding energy and nonhydrogenic rydberg series in monolayer WS2. Phys. Rev. Lett. 113, 076802 (2014).
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献