Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide-Reference-Cited by-同舟云学术

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Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Published:2014-05-07 Issue:1 Volume:5 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Nayak Avinash P.,Bhattacharyya Swastibrata,Zhu Jie,Liu Jin,Wu Xiang,Pandey Tribhuwan,Jin Changqing,Singh Abhishek K.,Akinwande Deji,Lin Jung-Fu

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms4731.pdf

Reference65 articles.

1. Wang, Q. H. et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnol. 7, 699–712 (2012).

2. Butler, S. Z. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898–2926 (2013).

3. Fontana, M. et al. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. Sci. Rep. 3, 1634 (2013).

4. Yin, Z. et al. Single-layer MoS2 phototransistors. ACS Nano 6, 74–80 (2011).

5. Lee, H. S. et al. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 12, 3695–3700 (2012).

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