Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition-Reference-Cited by-同舟云学术

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Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition

Published:2016-12 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Han Sang Wook,Park Youngsin,Hwang Young Hun,Jekal Soyoung,Kang Manil,Lee Wang G.,Yang Woochul,Lee Gun-Do,Hong Soon Cheol

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep38730.pdf

Reference51 articles.

1. Radisavljevic, B. et al. A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147 (2011).

2. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271 (2010).

3. Mak, K. F. et al. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

4. Wang, Q. H. et al. M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotech. 7, 699 (2012).

5. Xu, M., Liang, T., Shi, M. & Chen, H. Graphene-like two-dimensional materials. Chem. Rev. 113, 3766 (2013).

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