Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Link
http://www.nature.com/articles/ncomms12373.pdf
Reference54 articles.
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3. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009).
4. Jeong, D. S., Schroeder, H. & Waser, R. Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack. Electrochem. Solid State Lett. 10, G51–G53 (2007).
5. Yang, J. J. et al. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology 20, 215201 (2009).
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