New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping-Reference-Cited by-同舟云学术

New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping

Published:2016-11-22 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Chen Bijuan,Deng Zheng,Li Wenmin,Gao Moran,Liu Qingqing,Gu C. Z.,Hu F. X.,Shen B. G.,Frandsen Benjamin,Cheung Sky,Lian Liu,Uemura Yasutomo J.,Ding Cui,Guo Shengli,Ning Fanlong,Munsie Timothy J. S.,Wilson Murray Neff,Cai Yipeng,Luke Graeme,Guguchia Zurab,Yonezawa Shingo,Li Zhi,Jin Changqing

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep36578.pdf

Reference46 articles.

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3. Dietl, T. A ten-year perspective on dilute magnetic semiconductors and oxides. Nat. Mater. 9, 965–974 (2010).

4. Ohno, H., Munekata, H., Penney, T., Von Molnár, S. & Chang, L. L. Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors. Phys. Rev. Lett. 68, 2664–2667 (1992).

5. Reed, M. L. et al. Room temperature ferromagnetic properties of (Ga,Mn)N. Appl. Phys. Lett. 79, 3473–3475 (2001).

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