О зонной структуре Bi-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-

Author:

Немов С.А.123,Улашкевич Ю.В.4,Рулимов А.А.1,Демченко А.Е.1,Аллаххах А.А.1,Свешников И.В.3,Джафаров М.5

Affiliation:

1. Санкт-Петербургский политехнический университет Петра Великого, Санкт-Петербург, Россия

2. Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина), Санкт-Петербург, Россия

3. Забайкальский государственный университет, Чита, Россия

4. Физико-технический институт им. А.Ф. Иоффе РАН, Санкт-Петербург, Россия

5. Азербайджанский технический университет, AZ Гянджа, Азербайджан

Abstract

AbstractFor p -Bi_2Te_3 crystals grown by the Czochralski method, the temperature dependences of the conductivity, Hall coefficient, thermoelectric power (α), and transverse Nernst–Ettingshausen coefficient are obtained experimentally in the temperature range 77–450 K. The transmittance spectrum in the range 400–5250 cm^–1 is recorded at room temperature. It is shown that, to interpret the temperature dependences of the scattering parameter r and the ratio of the thermoelectric power to temperature (α/ T ), it is essential to take into account the complex valence-band structure and the contribution of heavy holes to transport phenomena. Estimations of the energy band parameters in the context of the two-band model give a hole effective mass close to the free electron mass and the energy gap between nonequivalent extrema at a level of several hundredths of eV. In the absorption spectrum derived from the transmittance spectrum, a sharp increase in absorption defined by indirect interband transitions with the band gap E _ g ≈ 0.14 eV is observed in the region of frequencies ν ≥ 1000 cm^–1. The absorption spectrum calculated from the reflectance data using the Kramers–Kronig relations is in agreement with the experimental absorption spectrum.

Publisher

Ioffe Institute Russian Academy of Sciences

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

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