Эллипсометрия нанокристаллических пленок VO-=SUB=-2-=/SUB=-, VO-=SUB=-2-=/SUB=- : Mg, VO-=SUB=-2-=/SUB=- : Ge

Author:

Кастро Р.А.1,Ильинский А.В.2,Смирнова Л.М.1,Пашкевич М.Э.3,Шадрин Е.Б.2

Affiliation:

1. Российский государственный педагогический университет им. А.И. Герцена, Санкт-Петербург, Россия

2. Физико-технический институт им. А.Ф. Иоффе РАН, Санкт-Петербург, Россия

3. Санкт-Петербургский политехнический университет Петра Великого, Санкт-Петербург, Россия

Abstract

The spectra of the refractive index n(λ) and the extinction coefficient k(λ) of thin VO2, VO2: Mg, VO2:Ge films were measured using the ellipsometric method. For an undoped VO2 film at a wavelength λ = 632.8 nm, near the insulator-metal phase transition, the n(T) and k(T) thermal hysteresis loops were studied. An interpretation of the results is given on the base of the Moss relation, the idea of a change in n(T) and k(T) with an impurity variation of the material density, and also on the base of the ideology of the Coulomb transformation of the density of states function in strongly correlated materials.

Publisher

Ioffe Institute Russian Academy of Sciences

Subject

Surfaces and Interfaces

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