Author:
Jebur Khalid H.,Mohammed Nadheer Jassim
Abstract
In this research, thin films of gallium oxide β-Ga₂O₃ nanostructures were prepared by pulsed laser ablation in distilled water (PLAL), then deposited on quartz substrate by the drop-casting method at 90 oC. The Nd-YAG laser was used with a wavelength of 1064 nm and a repetition rate of 5 Hz. The effect of increasing laser fluencies on the structural and optical properties was investigated by, Transmission electron microscope (TEM), Atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometer microscopy (UV-VIS). Crystallite size for all samples increased with the increasing the fluency of laser excepting at the fluency of laser 5.57 J/cm2 was 9.78 nm. The formation of nanoparticles, spindle-like, nanosheet and core-shell of β-Ga₂O₃ have been observed by the images of TEM at the fluencies of laser 4.77, 5.57, 5.97, and 6.36 J/cm2, respectively. The nanocluster and nanoroads of the β-Ga₂O₃ thin films can be seen by the SEM images at the all fluencies of laser 4.77, 5.97, 6.36 and 5.57 J/cm2. The results of XRD investigations showed that the diffractions patern of β-Ga₂O₃ transformed from the monoclinic phase with (-201), (-402), and (-603) into orthorhombic phase with (002), 004), and (006) when increased the fluency of laser. The energy bandgap decreased with the increase of laser fluencies, and the absorption peak was located in the UV region.
Publisher
Al-Mustansiriyah Journal of Science
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献