Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors-Reference-Cited by-同舟云学术

Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors

Published:2007-08-25 Issue:9 Volume:7 Page:2778-2783
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Khanal D. R.¹,Wu J.¹

Affiliation:

1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl071330l

Reference23 articles.

1. Nanowire electronic and optoelectronic devices

2. Nanowire-based one-dimensional electronics

3. Semiconductor nanowires: optics and optoelectronics

4. Vertical high-mobility wrap-gated InAs nanowire transistor

5. Ge/Si nanowire heterostructures as high-performance field-effect transistors

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