Lattice Relaxation at the Interface of Two-Dimensional Crystals: Graphene and Hexagonal Boron-Nitride-Reference-Cited by-同舟云学术

Lattice Relaxation at the Interface of Two-Dimensional Crystals: Graphene and Hexagonal Boron-Nitride

Published:2014-08-05 Issue:9 Volume:14 Page:5133-5139
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lu Jiong¹²,Gomes Lídia C.²³,Nunes Ricardo W.³,Castro Neto A. H.²⁴,Loh Kian Ping¹²

Affiliation:

1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore

2. Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore

3. Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Avenida Antônio Carlos 6627, Pampulha, 30123-970, Belo Horizonte, Minas Gerais, Brazil

4. Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore

Funder

National Research Foundation

Ministry of Education - Singapore

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fundação de Amparo à Pesquisa do Estado de Minas Gerais

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl501900x

Reference55 articles.

1. Nucleation of misfit dislocations in strained‐layer epitaxy in the GexSi1−x/Si system

2. Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems

3. Optoelectronic Properties in Monolayers of Hybridized Graphene and Hexagonal Boron Nitride

4. Atomic layers of hybridized boron nitride and graphene domains

5. Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges

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