Mesostructured MTES-Derived Silica Thin Film with Spherical Voids Investigated by TEM: 2. Dislocations and Strain Relaxation-Reference-Cited by-同舟云学术

Mesostructured MTES-Derived Silica Thin Film with Spherical Voids Investigated by TEM: 2. Dislocations and Strain Relaxation

Published:2003-08-06 Issue:18 Volume:19 Page:7289-7294
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Wu X.¹,Yu K.¹,Brinker C. J.¹,Ripmeester J.¹

Affiliation:

1. Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada, Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada, and Sandia National Laboratories, MS 1349, Albuquerque, New Mexico 87185 and Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, New Mexico 87131

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la034309i

Reference30 articles.

1. Some current topics in dislocation theory

2. The first stage of stress relaxation in tensile strained In1-xGaxAs1-yPyfilms

3. Defects in epitaxial multilayers

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