Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)-Reference-Cited by-同舟云学术

Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)

Published:2014-09-19 Issue:19 Volume:6 Page:16782-16791
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Liyi¹,Zhao Xueying¹,Wong Ching-Ping¹²

Affiliation:

1. School of Materials Science and Engineering, Georgia Institute of Technology. 771 Ferst Drive, Atlanta, Georgia 30332, United States

2. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong

Funder

Division of Civil, Mechanical and Manufacturing Innovation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am504046b

Reference28 articles.

1. Through-Silicon Via (TSV)

2. High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology

3. Potassium hydroxide polishing of nanoscale deep reactive-ion etched ultrahigh aspect ratio gratings

4. Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures

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