Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors-Reference-Cited by-同舟云学术

Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors

Published:2009-10-21 Issue:22 Volume:21 Page:5443-5455
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Milanov Andrian P.¹,Toader Teodor²,Parala Harish¹,Barreca Davide³,Gasparotto Alberto⁴,Bock Claudia²,Becker Hans-Werner⁵,Ngwashi Divine K.⁶,Cross Richard⁶,Paul Shashi⁶,Kunze Ulrich²,Fischer Roland A.¹,Devi Anjana¹

Affiliation:

1. Inorganic Chemistry II, Ruhr-University Bochum, 44801 Bochum, Germany

2. Institute for Electronic Materials and Nanoelectronics, Ruhr-University Bochum, 44801 Bochum, Germany

3. CNR-ISTM and INSTM, Department of Chemistry, Padova University, Via Marzolo, 1, 35131 Padova, Italy

4. Department of Chemistry, Padova University and INSTM, Via Marzolo, 1, 35131 Padova, Italy

5. Dynamitron-Tandem-Laboratorium (DTL) of RUBION

6. Emerging Technologies Research Centre, De Montfort University, Leicester, LE1 9BH, U.K.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm902123m

Reference65 articles.

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5. Metal–Oxide–High-$\kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

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