Infrared Characterization of Interfacial Si−O Bond Formation on Silanized Flat SiO2/Si Surfaces
Author:
Affiliation:
1. Department of Chemistry
2. Department of Electrical Engineering
3. Department of Materials Science and Engineering
4. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854
Publisher
American Chemical Society (ACS)
Subject
Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/la904597c
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