Theoretical Study of the Heats of Formation of Small Silicon-Containing Compounds
Author:
Affiliation:
1. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, MS K1-96, P.O. Box 999, Richland, Washington 99352
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp990596g
Reference60 articles.
1. Thermochemistry of CHn, SiHn(n=0–4), and the cations SiH+, SiH2+, and SiH3+: A converged quantum mechanical approach
2. Relativistic all-electron molecular Hartree-Fock-Dirac-(Breit) calculations on CH4, SiH4, GeH4, SnH4, PbH4
3. Relativistic effects in silicon chemistry: Are the experimental heats of formation of the silicon atom and SiH4 compatible?
4. Accurate Heats of Formation for SiFn and SiFn+, for n = 1−4
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