Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds-Reference-Cited by-同舟云学术

Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds

Published:2007-04-07 Issue:17 Volume:111 Page:6428-6433
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Reusch Thilo C. G.¹,Radny Marian W.¹,Smith Phillip V.¹,Warschkow Oliver¹,Marks Nigel A.¹,Curson Neil J.¹,McKenzie David R.¹,Simmons Michelle Y.¹

Affiliation:

1. Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney 2052, New South Wales, Australia, School of Mathematical and Physical Sciences, The University of Newcastle, Callaghan 2308, New South Wales, Australia, and Centre for Quantum Computer Technology, School of Physics, The University of Sydney, Sydney 2006, New South Wales, Australia

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp068834c

Reference53 articles.

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