Phase Change Characteristics in GeTe–CuTe Pseudobinary Alloy Films
Author:
Affiliation:
1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba Central 4, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology
KAKENHI
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp5066264
Reference33 articles.
1. Phase-change materials for rewriteable data storage
2. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
3. Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials
4. Fourfold coordinated Te atoms in amorphous GeCu2Te3 phase change material
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