Opening an Electrical Band Gap of Bilayer Graphene with Molecular Doping-Reference-Cited by-同舟云学术

Opening an Electrical Band Gap of Bilayer Graphene with Molecular Doping

Published:2011-08-09 Issue:9 Volume:5 Page:7517-7524
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhang Wenjing¹,Lin Cheng-Te¹,Liu Keng-Ku¹,Tite Teddy¹,Su Ching-Yuan¹,Chang Chung-Huai²,Lee Yi-Hsien¹,Chu Chih-Wei¹,Wei Kung-Hwa³,Kuo Jer-Lai²,Li Lain-Jong¹⁴

Affiliation:

1. Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan

2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 106, Taiwan

3. Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

4. Department of Photonics, National Chiao Tung University, HsinChu 300, Taiwan.

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn202463g

Reference55 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Wafer-Scale Graphene Integrated Circuit

3. Two-dimensional gas of massless Dirac fermions in graphene

4. A graphene-based broadband optical modulator

5. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

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