New Aspects on the Reduction of Nitric Acid during Wet Chemical Etching of Silicon in Concentrated HF/HNO3 Mixtures-Reference-Cited by-同舟云学术

New Aspects on the Reduction of Nitric Acid during Wet Chemical Etching of Silicon in Concentrated HF/HNO3 Mixtures

Published:2008-08-14 Issue:36 Volume:112 Page:14139-14144
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Steinert M.¹,Acker J.¹,Wetzig K.¹

Affiliation:

1. Qimonda Dresden GmbH and Co. OHG, Königsbrücker Straβe 180, 01099 Dresden, Germany, Leibniz Institute for Solid State and Material Research Dresden (IFW Dresden), P.O. Box 270116, D-01171 Dresden, Germany, and Department of Biological, Chemical, and Process Engineering, University of Applied Science, Groβenhainer Strasse 57, D-01968 Senftenberg, Germany

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp801937z

Reference28 articles.

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4. Tool, C. J. J.; Coletti, G.; Granek, F. J.; Hoornstra, J.; Koppes, M.; Riffe, H. C.; Romijin, I. G.; Weeber, A. W.;17% mc-Si solar cell efficiency using full in-line processing with improved texturing and screen-printing;Barcelona,2005; pp578−583

5. Chemical Etching of Silicon

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