Mixed Dimensional ZnO/WSe<sub>2</sub> Piezo-gated Transistor with Active Millinewton Force Sensing-Reference-Cited by-同舟云学术

Mixed Dimensional ZnO/WSe₂ Piezo-gated Transistor with Active Millinewton Force Sensing

Published:2022-10-19 Issue:43 Volume:14 Page:49026-49034
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Geng Yulin¹^ORCID,Xu Jing¹^ORCID,Bin Che Mahzan Muhammad Ammar¹,Lomax Peter¹,Saleem Muhammad Mubasher²,Mastropaolo Enrico¹,Cheung Rebecca¹

Affiliation:

1. Institute for Integrated Micro and Nano Systems, School of Engineering, University of Edinburgh, Scottish Microelectronics Centre, Edinburgh EH9 3FF, United Kingdom

2. Department of Mechatronics Engineering, National University of Sciences and Technology (NUST), Islamabad 44000, Pakistan

Funder

Engineering and Physical Sciences Research Council

University Of Edinburgh

China Scholarship Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c15730

Reference59 articles.

1. Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution

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3. Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

4. High-resolution electroluminescent imaging of pressure distribution using a piezoelectric nanowire LED array

5. Tribotronic Transistor Array as an Active Tactile Sensing System

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