Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS<sub>2</sub> Schottky Heterostructures-Reference-Cited by-同舟云学术

Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS₂ Schottky Heterostructures

Published:2022-12-30 Issue:1 Volume:15 Page:2468-2478
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhu Xudan¹²^ORCID,He Junbo³,Liu Weiming³,Zheng Yuxiang³^ORCID,Sheng Chuanxiang³^ORCID,Luo Yi⁴,Li Shaojuan²^ORCID,Zhang Rongjun¹³⁵,Chu Junhao¹

Affiliation:

1. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai200433, China

2. State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130033, China

3. School of Information Science and Engineering, Fudan University, Shanghai200433, China

4. Microsystem and Terahertz Research Center, Chengdu610200, China

5. Academy for Engineering & Technology, Fudan University, Shanghai200433, China

Funder

Natural Science Foundation of Jilin Province

Fudan University

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Changchun Key Research and Development Program

State Key Laboratory of Applied Optics

Publisher

American Chemical Society (ACS)