Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer-Reference-Cited by-同舟云学术

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Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer

Published:2022-04-08 Issue:15 Volume:14 Page:17682-17690
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Yue¹,Kim Minjae¹,Rehman Malik Abdul¹,Chabungbam Akendra Singh¹,Kim Dong-eun¹,Lee Hong Sub²^ORCID,Kymissis Ioannis³^ORCID,Park Hyung-Ho¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. Department of Materials Science and Engineering, Kangwon National University, Chuncheon 24341, Republic of Korea

3. Department of Electrical Engineering, Columbia University, New York, New York 10027, United States

Funder

National Research Foundation of Korea

China Scholarship Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c03451

Reference45 articles.

1. The future of electronics based on memristive systems

2. Mott-transition-based RRAM

3. Neuromorphic computing using non-volatile memory

4. Resistance random access memory

5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced memory window and efficient resistive switching in stabilized BaTiO3-based RRAM through incorporation of Al2O3 interlayer;Journal of Materials Science & Technology;2025-04

2. Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations;Nanomaterials;2024-03-15

3. Comment on “Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer”;ACS Applied Materials & Interfaces;2024-02-21

4. Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films;Journal of Materials Chemistry C;2022

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