Charge Transport Manipulation via Interface Doping: Achieving Ultrasensitive Organic Semiconductor Gas Sensors-Reference-Cited by-同舟云学术

Charge Transport Manipulation via Interface Doping: Achieving Ultrasensitive Organic Semiconductor Gas Sensors

Published:2023-02-03 Issue:6 Volume:15 Page:8355-8366
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Zi¹²,Hu Jing³^ORCID,Lu Jie¹,Zhu Xiaofei¹,Zhou Xu¹,Huang Lizhen¹^ORCID,Chi Lifeng¹^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu 215123, P. R. China

2. Gusu Laboratory of Materials, 388 Ruoshui Road, Suzhou 215123, P.R. China

3. Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, Jiangsu Province 215009, China

Funder

Collaborative Innovation Center of Suzhou Nano Science and Technology

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Higher Education Discipline Innovation Project

Suzhou Key Laboratory of Surface and Interface Intelligent Matter

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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