Nanogap-Rich Surface-Enhanced Raman Spectroscopy-Active Substrate Based on Double-Step Deposition and Annealing of the Au Film over the Back Side of Polished Si
Author:
Affiliation:
1. SeNSE Centre, Indian Institute of Technology Delhi, Delhi 110016, India
2. Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, Delhi 110016, India
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.2c21378
Reference49 articles.
1. A Rapid and Sensitive Quantitative Analysis Method for TNT using Raman Spectroscopy
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