Tuning Threshold Voltage of Electrolyte-Gated Transistors by Binary Ion Doping-Reference-Cited by-同舟云学术

Tuning Threshold Voltage of Electrolyte-Gated Transistors by Binary Ion Doping

Published:2022-10-27 Issue:44 Volume:14 Page:50004-50012
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cho Kyung Gook¹,Seol Kyoung Hwan¹,Kim Min Su¹,Hong Kihyon²^ORCID,Lee Keun Hyung¹^ORCID

Affiliation:

1. Department of Chemistry and Chemical Engineering, Education and Research Center for Smart Energy and Materials, Inha University, Incheon22212, Republic of Korea

2. Department of Materials Science and Engineering, Chungnam National University (CNU), Daejeon34134, Republic of Korea

Funder

National Research Foundation of Korea

Korea Basic Science Institute

Korea Institute for Advancement of Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c15229

Reference62 articles.

1. “Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics

2. Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic

3. Ion Gel Gated Polymer Thin-Film Transistors

4. Electrochemiluminescent Transistors: A New Strategy toward Light‐Emitting Switching Devices

5. Light‐Emitting Devices Based on Electrochemiluminescence Gels

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