Domain Wall Geometry Controls Conduction in Ferroelectrics-Reference-Cited by-同舟云学术

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Domain Wall Geometry Controls Conduction in Ferroelectrics

Published:2012-09-27 Issue:11 Volume:12 Page:5524-5531
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Vasudevan R. K.¹,Morozovska A. N.,Eliseev E. A.,Britson J.²,Yang J.-C.³,Chu Y.-H.³,Maksymovych P.⁴,Chen L. Q.²,Nagarajan V.¹,Kalinin S. V.⁴

Affiliation:

1. School of Materials Science and Engineering, University of New South Wales, Kensington 2052, Australia

2. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

3. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010

4. The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl302382k

Reference41 articles.

1. Magnetic Domain-Wall Racetrack Memory

2. Conduction at domain walls in oxide multiferroics

3. Multiferroic Domain Boundaries as Active Memory Devices: Trajectories Towards Domain Boundary Engineering

4. Domain wall nanoelectronics

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