Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films-Reference-Cited by-同舟云学术

Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films

Published:2009-05-13 Issue:6 Volume:9 Page:2390-2394
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yaffe Omer¹,Scheres Luc¹,Puniredd Sreenivasa Reddy¹,Stein Nir¹,Biller Ariel¹,Lavan Rotem Har¹,Shpaisman Hagay¹,Zuilhof Han¹,Haick Hossam¹,Cahen David¹,Vilan Ayelet¹

Affiliation:

1. Department of Materials & Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel, Laboratory of Organic Chemistry, Wageningen University, Dreijenplein 8, 6703 HB Wageningen, The Netherlands, and Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion—Israel Institute of Technology, Haifa 32000, Israel

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl900953z

Reference39 articles.

1. How Do Electronic Carriers Cross Si-Bound Alkyl Monolayers?

2. What is the Barrier for Tunneling Through Alkyl Monolayers? Results from n- and p-Si–Alkyl/Hg Junctions

3. Highly Stable Organic Monolayers for Reacting Silicon with Further Functionalities: The Effect of the C−C Bond nearest the Silicon Surface

4. Highly Stable Organic Modification of Si(111) Surfaces: Towards Reacting Si with Further Functionalities while Preserving the Desirable Chemical Properties of Full Si−C Atop Site Terminations

5. Self-Assembly of High-Quality Covalently Bound Organic Monolayers onto Silicon

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