Growth of epitaxial (100) gallium arsenide films using the single-source precursor [Me2Ga(.mu.-t-Bu2As)]2-Reference-Cited by-同舟云学术

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Growth of epitaxial (100) gallium arsenide films using the single-source precursor [Me2Ga(.mu.-t-Bu2As)]2

Published:1992-01 Issue:1 Volume:4 Page:7-9
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Miller James E.,Ekerdt John G.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm00019a003

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mass spectrometry drives stoichiometric GaAs formation from single-source precursors;Progress in Solid State Chemistry;2018-03

2. Precursor directed synthesis – “molecular” mechanisms in the Soft Chemistry approaches and their use for template-free synthesis of metal, metal oxide and metal chalcogenide nanoparticles and nanostructures;Nanoscale;2014

3. Arsenic: Organoarsenic Chemistry;Encyclopedia of Inorganic and Bioinorganic Chemistry;2011-12-15

4. III-V and Related Semiconductor Materials;The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities;2011-03-30

5. ChemInform Abstract: Growth of Epitaxial (100) GaAs Films Using the Single-Source Precursor (Me2Ga(μ-tBu2As))2.;ChemInform;2010-08-22

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