Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition

Published:2013-11-13 Issue:11 Volume:7 Page:10129-10138
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Han Gang Hee¹,Rodríguez-Manzo Julio A.,Lee Chan-Woo,Kybert Nicholas J.,Lerner Mitchell B.,Qi Zhengqing John,Dattoli Eric N.,Rappe Andrew M.,Drndic Marija,Johnson A. T. Charlie

Affiliation:

1. Department of Physics, Sungkyunkwan University (SKKU), Suwon, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn404331f

Reference48 articles.

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4. Intrinsic and extrinsic performance limits of graphene devices on SiO2

5. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

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