Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures
Author:
Affiliation:
1. Consortium for Advanced Science and Engineering, University of Chicago, Chicago, Illinois 60637, United States
2. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
Funder
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.0c00567
Reference72 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Two-dimensional atomic crystals
3. Single-layer MoS2 transistors
4. Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
5. Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS2/MoS2/hBN
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