Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics-Reference-Cited by-同舟云学术

Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics

Published:2020-09-21 Issue:10 Volume:7 Page:2650-2657
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Lu Tsung-Ju¹^ORCID,Lienhard Benjamin¹,Jeong Kwang-Yong¹,Moon Hyowon¹,Iranmanesh Ava¹,Grosso Gabriele²^ORCID,Englund Dirk¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. Photonics Initiative, Advanced Science Research Center and Physics Program, Graduate Center, City University of New York, New York, New York 10031, United States

Funder

Division of Chemistry

Samsung

Air Force Research Laboratory

Army Research Office

National Research Foundation of Korea

Massachusetts Institute of Technology

U.S. Department of Defense

City University of New York

Division of Physics

Center for Integrated Quantum Materials

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.0c01259

Reference44 articles.

1. Quantum technologies with optically interfaced solid-state spins

2. Material platforms for spin-based photonic quantum technologies

3. Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond

4. Optical and microwave control of germanium-vacancy center spins in diamond

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scandium-based point defect in AlN for quantum information processing;Physical Review B;2024-09-09

2. Emission dynamics of optically driven aluminum nitride quantum emitters;Physical Review B;2024-07-22

3. Quantum emitters in aluminum nitride induced by heavy ion irradiation;APL Quantum;2024-07-11

4. Room temperature quantum emitters in aluminum nitride epilayers on silicon;Applied Physics Letters;2024-06-10

5. Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing;Applied Physics Letters;2024-03-18