Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
Author:
Affiliation:
1. Department of Micro- and Nanosciences, Aalto University, Espoo, Finland
2. College of Optical Sciences, University of Arizona, Tucson, Arizona, United States
3. Institute of Photonics, University of Eastern Finland, Joensuu, Finland
Funder
Luonnontieteiden ja Tekniikan Tutkimuksen Toimikunta
Tekes
Directorate-General for Research and Innovation
Högskolan för elektroteknik, Aalto-yliopisto
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.6b00283
Reference41 articles.
1. Erbium-doped integrated waveguide amplifiers and lasers
2. Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides
3. Integrated Al$_2$O$_3$:Er$^{3+}$ Zero-Loss Optical Amplifier and Power Splitter With 40-nm Bandwidth
4. CMOS-compatible 75 mW erbium-doped distributed feedback laser
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