SiGe Nanomembrane Quantum-Well Infrared Photodetectors-Reference-Cited by-同舟云学术

SiGe Nanomembrane Quantum-Well Infrared Photodetectors

Published:2016-10-03 Issue:10 Volume:3 Page:1978-1985
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Durmaz Habibe¹,Sookchoo Pornsatit²,Cui Xiaorui²,Jacobson RB²,Savage Donald E.²,Lagally Max G.²,Paiella Roberto¹

Affiliation:

1. Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary’s Street, Boston, Massachusetts 02215, United States

2. Department of Materials Science and Engineering, University of Wisconsin−Madison, 1509 University Avenue, Madison, Wisconsin 53706, United States

Funder

Air Force Office of Scientific Research

Milli Egitim Bakanligi Türkiye

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.6b00524

Reference35 articles.

1. Mid-infrared photonics in silicon and germanium

2. Si1−xGex/Si multiple quantum well infrared detector

3. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K

4. Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

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