Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers
Author:
Affiliation:
1. LNESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, 20125 Milano, Italy
2. Department of Physics, The University of Warwick, Coventry CV4 7AL, United Kingdom
Funder
Fondazione Cariplo
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.6b00438
Reference36 articles.
1. Lasing in direct-bandgap GeSn alloy grown on Si
2. Ge-on-Si laser operating at room temperature
3. An electrically pumped germanium laser
4. Lasing from Glassy Ge Quantum Dots in Crystalline Si
5. Recent progress in lasers on silicon
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