Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy
Author:
Affiliation:
1. Chemistry and Nanoscience Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
2. Department of Electrical and Electronic Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Funder
Basic Energy Sciences
National Renewable Energy Laboratory
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b00671
Reference57 articles.
1. Direct generation of multiple excitons in adjacent silicon nanocrystals revealed by induced absorption
2. Spectroscopy of carrier multiplication in nanocrystals
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4. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
5. Nanoscience and Nanostructures for Photovoltaics and Solar Fuels
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