TiO2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions-Reference-Cited by-同舟云学术

TiO2–x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film–Si Junctions

Published:2019-04-08 Issue:4 Volume:6 Page:953-960
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Güsken Nicholas A.¹^ORCID,Lauri Alberto¹^ORCID,Li Yi¹^ORCID,Matsui Takayuki¹,Doiron Brock¹^ORCID,Bower Ryan²,Regoutz Anna²^ORCID,Mihai Andrei²^ORCID,Petrov Peter K.²,Oulton Rupert F.¹,Cohen Lesley F.¹,Maier Stefan A.¹³

Affiliation:

1. The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom

2. Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom

3. Chair in Hybrid Nanosystems, Nanoinstitute Munich, Fakultät für Physik, Ludwig-Maximilians-Universität München, 80539 München, Germany

Funder

Engineering and Physical Sciences Research Council

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b01639

Reference54 articles.

1. Embedding Plasmonic Nanostructure Diodes Enhances Hot Electron Emission

2. Photodetection with Active Optical Antennas

3. Plasmon-induced hot carrier science and technology

4. Hot Electron Harvesting via Photoelectric Ejection and Photothermal Heat Relaxation in Hotspots-Enriched Plasmonic/Photonic Disordered Nanocomposites

5. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

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