Spectral Efficiency and Energy Efficiency of Pulse-Amplitude Modulation Using 1.3 μm Wafer-Fusion VCSELs for Optical Interconnects-Reference-Cited by-同舟云学术

Spectral Efficiency and Energy Efficiency of Pulse-Amplitude Modulation Using 1.3 μm Wafer-Fusion VCSELs for Optical Interconnects

Published:2017-08-01 Issue:8 Volume:4 Page:2018-2024
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Wolf Philip¹,Li Hui²^ORCID,Caliman Andrei³,Mereuta Alexandru³,Iakovlev Vladimir³,Sirbu Alexei³,Kapon Elyahou³,Bimberg Dieter¹⁴

Affiliation:

1. Center of NanoPhotonics and Department of Solid-State Physics, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

2. Optoelectronic Materials and Technologies Engineering Laboratory of Shandong, College of Mathematical and Physical Sciences, Qingdao University of Science and Technology, Qingdao 266061, China

3. Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015, Switzerland

4. King Abdulaziz University, Jeddah, Kingdom of Saudi Arabia

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Natural Science Foundation of Qingdao

State Key Laboratory of Luminescence and Applications

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b00403

Reference28 articles.

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2. All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications

3. 1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

4. High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs

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