InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si-Reference-Cited by-同舟云学术

InGaN-Based Quantum Well Superluminescent Diode Monolithically Grown on Si

Published:2019-07-09 Issue:8 Volume:6 Page:2104-2109
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Liu Jianxun¹^ORCID,Wang Jin¹²,Sun Xiujian¹,Sun Qian¹³^ORCID,Feng Meixin¹^ORCID,Zhou Rui¹³,Zhou Yu¹³,Gao Hongwei¹,Liu Tong⁴,Huang Zengli⁴,Yang Hui¹³⁴

Affiliation:

1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China

2. University of Science and Technology Beijing, Beijing 100083, People’s Republic of China

3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, People’s Republic of China

4. Vacuum Interconnected Nanotech Workstation, SINANO, Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Chinese Academy of Sciences

Key R&D Program of Jiangsu Province

Suzhou Science and Technology Program

Open Fund of the State Key Laboratory of Reliability and Intelligence of Electrical Equipment

Key R&D Program of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b00657

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