On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide-Reference-Cited by-同舟云学术

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Published:2019-05-28 Issue:7 Volume:6 Page:1736-1743
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Wang Jun-Feng¹²,Li Qiang¹²,Yan Fei-Fei¹²,Liu He¹²,Guo Guo-Ping¹²^ORCID,Zhang Wei-Ping³,Zhou Xiong³,Guo Li-Ping³,Lin Zhi-Hai¹,Cui Jin-Ming¹²,Xu Xiao-Ye¹²,Xu Jin-Shi¹²,Li Chuan-Feng¹²^ORCID,Guo Guang-Can¹²

Affiliation:

1. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China

2. CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China

3. Accelerator Laboratory, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Anhui Initiative in Quantum Information Technologies

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link