High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
Author:
Affiliation:
1. Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec, Canada H3C 3A7
Funder
Minist?re de la D?fense Nationale
Canada Foundation for Innovation
Canada Research Chairs
Natural Sciences and Engineering Research Council of Canada
Mitacs
Prima Quebec
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.2c00260
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1. GaSb-Based p-i-n Photodiodes With Partially Depleted Absorbers for High-Speed and High-Power Performance at 2.5- $\mu \text{m}$ Wavelength
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3. Nanophotonics for light detection and ranging technology
4. High-Performance GeSn Photodetector Covering All Telecommunication Bands
5. 30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application
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