Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube-Reference-Cited by-同舟云学术

Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube

Published:2019-08-08 Issue:10 Volume:13 Page:11070-11077
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Bohaichuk Stephanie M.¹^ORCID,Muñoz Rojo Miguel¹²^ORCID,Pitner Gregory¹^ORCID,McClellan Connor J.¹^ORCID,Lian Feifei¹,Li Jason³,Jeong Jaewoo⁴,Samant Mahesh G.⁴,Parkin Stuart S. P.⁴,Wong H.-S. Philip¹,Pop Eric¹⁵^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Thermal and Fluid Engineering, University of Twente, 7500 AE Enschede, The Netherlands

3. Asylum Research, Santa Barbara, California 93117, United States

4. IBM Almaden Research Center, San Jose, California 95120, United States

5. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

Funder

Stanford University

Natural Sciences and Engineering Research Council of Canada

National Science Foundation

Stanford SystemX Alliance

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b03397

Reference35 articles.

1. Metal-insulator transitions

2. Mott Memory and Neuromorphic Devices

3. Electronic Properties of VO2near the Semiconductor-Metal Transition

4. Optical Properties of Vanadium Dioxide Film during Semiconductive–Metallic Phase Transition

5. Jerry, M.; Shukla, N.; Paik, H.; Schlom, D. G.; Datta, S., Dynamics of Electrically Driven Sub-Nanosecond Switching in Vanadium Dioxide. Proceedings from the IEEE Silicon Nanoelectron. Workshop, Honolulu, Hawaii, June 12–13; IEEE: New York, 2016.

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