Epitaxial Growth of High-Quality Monolayer MoS<sub>2</sub> Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices-Reference-Cited by-同舟云学术

Epitaxial Growth of High-Quality Monolayer MoS₂ Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Published:2022-12-27 Issue:1 Volume:17 Page:312-321
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Hu Jingyi¹²,Quan Wenzhi¹²,Yang Pengfei¹²,Cui Fangfang²,Liu Fachen¹³⁴,Zhu Lijie²,Pan Shuangyuan²,Huan Yahuan²,Zhou Fan¹²,Fu Jiatian²,Zhang Guanhua⁵,Gao Peng¹³⁴^ORCID,Zhang Yanfeng¹²^ORCID

Affiliation:

1. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China

2. School of Materials Science and Engineering, Peking University, Beijing 100871, People’s Republic of China

3. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People’s Republic of China

4. International Center for Quantum Materials, Peking University, Beijing 100871, People’s Republic of China

5. State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c07978

Reference49 articles.

1. How 2D semiconductors could extend Moore’s law

2. Promises and prospects of two-dimensional transistors