High-Spike Barrier Photodiodes Based on 2D Te/WS2 Heterostructures

Author:

Yu Huihui12,Wang Yunan1,Zeng Haoran1,Cao Zhihong1,Zhang Qinghua3,Gao Li1,Hong Mengyu1,Wei Xiaofu1,Zheng Yue1,Zhang Zheng12ORCID,Zhang Xiankun12,Zhang Yue12ORCID

Affiliation:

1. Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China

2. Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, P. R. China

3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences (CAS) Beijing 100190, P. R. China

Funder

China Association for Science and Technology

National Key Research and Development Program of China

China Postdoctoral Science Foundation

State Key Laboratory for Advanced Metals and Materials

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Beijing Nova Program

Chinese Academy of Sciences

Overseas Expertise Introduction Project for Discipline Innovation

Publisher

American Chemical Society (ACS)

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1. A Perspective on tellurium-based optoelectronics;Applied Physics Letters;2024-08-12

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