Understanding and Mapping Sensitivity in MoS2 Field-Effect-Transistor-Based Sensors-Reference-Cited by-同舟云学术

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Understanding and Mapping Sensitivity in MoS2 Field-Effect-Transistor-Based Sensors

Published:2020-08-12 Issue:9 Volume:14 Page:11637-11647
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Noyce Steven G.¹^ORCID,Doherty James L.¹^ORCID,Zauscher Stefan²^ORCID,Franklin Aaron D.¹³^ORCID

Affiliation:

1. Department of Electrical & Computer Engineering, Duke University, Durham, North Carolina 27708, United States

2. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States

3. Department of Chemistry, Duke University, Durham, North Carolina 27708, United States

Funder

National Institutes of Health

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c04192

Reference49 articles.

1. Recent advances in emerging 2D nanomaterials for biosensing and bioimaging applications

2. Detection of individual gas molecules adsorbed on graphene

3. Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection

4. Sensitivity enhancement of graphene Hall sensors modified by single-molecule magnets at room temperature

5. Graphene and other 2D materials: a multidisciplinary analysis to uncover the hidden potential as cancer theranostics

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4. Flicker Noise in Resistive Gas Sensors—Measurement Setups and Applications for Enhanced Gas Sensing;Sensors;2024-01-09

5. Material processing, performance and reliability of MoS2 field effect transistor (FET) technology- A critical review;Materials Science in Semiconductor Processing;2023-06

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