Photoelectric Logic and <i>In Situ</i> Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots-Reference-Cited by-同舟云学术

Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots

Author:

Pei Junxiang¹,Wu Xiaohan¹²,Liu Wen-Jun¹,Zhang David Wei¹³²,Ding Shi-Jin¹³^ORCID

Affiliation:

1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

2. Zhangjiang Fudan International Innovation Center, Shanghai 201203, China

3. National Integrated Circuit Innovation Center, Shanghai 201203, China

Funder

Ministry of Education of the People's Republic of China

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Scientific and Innovative Action Plan of Shanghai

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference31 articles.

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