Molecular Approach for Engineering Interfacial Interactions in Magnetic/Topological Insulator Heterostructures-Reference-Cited by-同舟云学术

Molecular Approach for Engineering Interfacial Interactions in Magnetic/Topological Insulator Heterostructures

Published:2020-04-15 Issue:5 Volume:14 Page:6285-6294
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Cuxart Marc G.¹^ORCID,Valbuena Miguel Angel¹^ORCID,Robles Roberto²^ORCID,Moreno César¹^ORCID,Bonell Frédéric¹,Sauthier Guillaume¹,Imaz Inhar¹^ORCID,Xu Heng¹,Nistor Corneliu³,Barla Alessandro⁴,Gargiani Pierluigi⁵^ORCID,Valvidares Manuel⁵,Maspoch Daniel¹⁶^ORCID,Gambardella Pietro³,Valenzuela Sergio O.¹⁶,Mugarza Aitor¹⁶^ORCID

Affiliation:

1. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Barcelona, Spain

2. Centro de Fı́sica de Materiales CFM/MPC (CSIC-UPV/EHU), 20018 Donostia-San Sebastián Spain

3. Department of Materials, ETH Zurich, Hönggerbergring 64, CH-8093 Zurich, Switzerland

4. Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche (CNR), I-34149 Trieste, Italy

5. ALBA Synchrotron Light Source, Carretera BP 1413km 3.3, E-08290 Cerdanyola del Vallès, Spain

6. Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain

Funder

Departament d'Innovaci?, Universitats i Empresa, Generalitat de Catalunya

European Regional Development Fund

Ministerio de Econom?a y Competitividad

H2020 Future and Emerging Technologies

Generalitat de Catalunya

FP7 Ideas: European Research Council

Agencia Estatal de Investigaci?n

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c02498

Reference61 articles.

1. Colloquium: Topological insulators

2. Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator

3. Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

4. Spin to Charge Conversion at Room Temperature by Spin Pumping into a New Type of Topological Insulator:α-Sn Films

5. Epitaxy and structural properties of (V,Bi,Sb) 2Te3 layers exhibiting the quantum anomalous Hall effect

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