Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors-Reference-Cited by-同舟云学术

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Published:2018-06-29 Issue:7 Volume:12 Page:7039-7047
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Resta Giovanni V.¹^ORCID,Balaji Yashwanth²³,Lin Dennis²,Radu Iuliana P.²,Catthoor Francky²³,Gaillardon Pierre-Emmanuel⁴,De Micheli Giovanni¹

Affiliation:

1. Integrated System Laboratory (LSI), School of Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

2. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

3. KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

4. Laboratory of NanoIntegrated Systems (LNIS), Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, United States

Funder

Division of Electrical, Communications and Cyber Systems

Imec

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsnano.8b02739

Reference55 articles.

1. Design of ion-implanted MOSFET's with very small physical dimensions

2. Designing Reliable Systems from Unreliable Components: The Challenges of Transistor Variability and Degradation

3. Random-Dopant-Induced Variability in Nano-CMOS Devices and Digital Circuits

4. Effect of Ion Flux in Source-Drain Extension Ion Implantation for 10-nm Node FinFet and beyond on 300/450mm Platforms

Cited by 113 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of molecular-scale logic devices and implication of artificial neural networks for analysis of anion-responsive behaviors of luminescent ruthenium-terpyridine complex;Inorganica Chimica Acta;2024-10

2. Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits;Nanomaterials;2024-08-28

3. Logic Computing Field-Effect Transistors Based on a Monolayer WSe₂ Homojunction for the Semi-adder and Decoder;Nano Letters;2024-08-27

4. Exploring new logic devices: Unlocking potential with floating-gate transistor;Applied Physics Reviews;2024-08-09

5. Advancing Molecular-Scale Logic Devices through Multistage Switching in a Luminescent Bimetallic Ru(II)-Terpyridine Complex;Inorganic Chemistry;2024-08-02