Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides-Reference-Cited by-同舟云学术

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Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides

Published:2021-05-13 Issue:5 Volume:15 Page:8780-8789
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Bretscher Hope¹^ORCID,Li Zhaojun¹²,Xiao James¹,Qiu Diana Yuan³^ORCID,Refaely-Abramson Sivan⁴^ORCID,Alexander-Webber Jack A.¹^ORCID,Tanoh Arelo¹^ORCID,Fan Ye¹,Delport Géraud¹,Williams Cyan A.¹,Stranks Samuel D.¹^ORCID,Hofmann Stephan¹^ORCID,Neaton Jeffrey B.⁵⁶,Louie Steven G.⁵⁶^ORCID,Rao Akshay¹^ORCID

Affiliation:

1. University of Cambridge, Cambridge, CB2 1TN, U.K.

2. Uppsala University, Uppsala, 751 20, Sweden

3. Yale University, New Haven, Connecticut 06520, United States

4. Weizmann Institute of Science, Rehovot, 76100, Israel

5. University of California Berkeley, Berkeley, California 94720, United States

6. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Funder

Fulbright Association

Engineering and Physical Sciences Research Council

Royal Society

Vetenskapsr?det

Basic Energy Sciences

Tata Sons

Rothschild Foundation Hanadiv Europe

Royal Commission for the Exhibition of 1851

H2020 European Research Council

Department of Physics, University of Cambridge

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c01220

Reference69 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Excitons in atomically thin transition-metal dichalcogenides

4. Near-unity photoluminescence quantum yield in MoS2

5. Ultrafast Dynamics of Defect-Assisted Electron–Hole Recombination in Monolayer MoS2

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