Epitaxial Synthesis of Highly Oriented 2D Janus Rashba Semiconductor BiTeCl and BiTeBr Layers
Author:
Affiliation:
1. Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University, Tempe, Arizona 85287, United States
2. Department of Physics, Arizona State University, Tempe, Arizona 85287, United States
Funder
U.S. Department of Energy
Division of Civil, Mechanical and Manufacturing Innovation
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c06434
Reference34 articles.
1. Discovery of a single topological Dirac fermion in the strong inversion asymmetric compound BiTeCl
2. Quantum properties and applications of 2D Janus crystals and their superlattices
3. Anomalous Behavior of 2D Janus Excitonic Layers under Extreme Pressures
4. Emergence of electric polarity in BiTeX (X = Br and I) monolayers and the giant Rashba spin splitting
5. Giant Ambipolar Rashba Effect in the Semiconductor BiTeI
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