Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors-Reference-Cited by-同舟云学术

Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors

Published:2017-09-22 Issue:10 Volume:11 Page:9854-9862
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ni Zhenyi,Ma Lingling,Du Sichao,Xu Yang^ORCID,Yuan Meng,Fang Hehai¹,Wang Zhen¹,Xu Mingsheng,Li Dongsheng,Yang Jianyi,Hu Weida¹^ORCID,Pi Xiaodong^ORCID,Yang Deren

Affiliation:

1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Churchill College, University of Cambridge

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.7b03569

Reference59 articles.

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5. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

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